DMT4014LDV Series

40V N-Channel Enhancement Mode MOSFET

Catalog

40V N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)
Diodes Inc DMT4014LDV-7	11.2 nC	8-PowerVDFN	3 V	2 N-Channel (Dual)	-55 °C	150 °C	19 mOhm	MOSFET (Metal Oxide)	8.5 A 26.5 A	1 W	PowerDI3333-8 (Type UXC)	Surface Mount	40 V

Catalog

40V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application

• Low RDS(ON) — Ensures On-State Losses Are Minimized

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance(RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.