IPW65R420CFDFKSA2

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Infineon Technologies

TRANS MOSFET N-CH 650V 8.7A 3-PIN(3+TAB) TO-247 TUBE

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Infineon Technologies

TRANS MOSFET N-CH 650V 8.7A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R420CFDFKSA2

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPW65R420CFDFKSA1	10 V	4.5 V	83.3 W	32 nC	PG-TO247-3-1	N-Channel	Through Hole	650 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	TO-247-3	870 pF	420 mOhm	8.7 A
Infineon Technologies IPW65R420CFDFKSA2	10 V	4.5 V	83.3 W	31.5 nC	PG-TO247-3-41	N-Channel	Through Hole	650 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	TO-247-3	870 pF	420 mOhm	8.7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO247-3-41

Technical documentation and resources