IPW65R420 Series

Catalog

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 420 MOHM; FAST RECOVERY DIODE

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPW65R420CFDFKSA1	10 V	4.5 V	83.3 W	32 nC	PG-TO247-3-1	N-Channel	Through Hole	650 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	TO-247-3	870 pF	420 mOhm	8.7 A
Infineon Technologies IPW65R420CFDFKSA2	10 V	4.5 V	83.3 W	31.5 nC	PG-TO247-3-41	N-Channel	Through Hole	650 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	TO-247-3	870 pF	420 mOhm	8.7 A