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IRF2805PBF - WENNXPBT258-600R,127

IRF2805PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 175 A, 0.0047 OHM, TO-220AB, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsApplication Note ENIR Part Numbering System+1
IRF2805PBF - WENNXPBT258-600R,127

IRF2805PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 175 A, 0.0047 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsApplication Note ENIR Part Numbering System+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF2805PBF
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]230 nC
Input Capacitance (Ciss) (Max) @ Vds5110 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)330 W
Rds On (Max) @ Id, Vgs4.7 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 243$ 1.24
243$ 1.24
Tube 1$ 2.38
1$ 2.38
10$ 1.55
10$ 1.55
100$ 1.08
100$ 1.08
500$ 1.07
500$ 1.07
NewarkEach 1$ 2.24
10$ 1.61
100$ 1.51
500$ 1.51
1000$ 1.50

Description

General part information

IRF2805 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.