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IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 4.7 MOHM; WIDE SOA
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 200 W | 4.7 mOhm | N-Channel | MOSFET (Metal Oxide) | 10 V | Surface Mount | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 55 V | 20 V | D2PAK | 5110 pF | 135 A | 4 V | 230 nC |
Infineon Technologies | 330 W | 4.7 mOhm | N-Channel | MOSFET (Metal Oxide) | 10 V | Through Hole | -55 °C | 175 ░C | TO-220-3 | 55 V | 20 V | TO-220AB | 5110 pF | 75 A | 4 V | 230 nC |
Infineon Technologies | 330 W | 4.7 mOhm | N-Channel | MOSFET (Metal Oxide) | 10 V | Through Hole | -55 °C | 175 ░C | TO-220-3 | 55 V | 20 V | TO-220AB | 5110 pF | 75 A | 4 V | 230 nC |