
IPB65R190CFD7AATMA1
ActiveInfineon Technologies
MOSFET, N-CH, 650V, 14A, TO-263 ROHS COMPLIANT: YES
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IPB65R190CFD7AATMA1
ActiveInfineon Technologies
MOSFET, N-CH, 650V, 14A, TO-263 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB65R190CFD7AATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1291 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 77 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB65R190 Series
N-Channel 650 V 14A (Tc) 77W (Tc) Surface Mount PG-TO263-3
Documents
Technical documentation and resources