IPB65R190 Series

Catalog

MOSFET, N-CH, 650V, 17.5A, TO-263 ROHS COMPLIANT: YES

Part	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Grade	Qualification	Power Dissipation (Max)
Infineon Technologies IPB65R190CFDATMA2	20 V	MOSFET (Metal Oxide)	68 nC	17.5 A	-55 °C	150 °C	1850 pF	190 mOhm	151 W	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V	10 V	Surface Mount	650 V
Infineon Technologies IPB65R190CFDAATMA1	20 V	MOSFET (Metal Oxide)	68 nC	17.5 A	-40 °C	150 °C	1850 pF	190 mOhm	151 W	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V	10 V	Surface Mount	650 V	Automotive	AEC-Q101
Infineon Technologies IPB65R190CFD7AATMA1	20 V	MOSFET (Metal Oxide)	28 nC	14 A	-40 °C	150 °C	1291 pF	190 mOhm		N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V		Surface Mount	650 V	Automotive	AEC-Q101	77 W