BSC112N06LDATMA1

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 11.2 MOHM;

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Infineon Technologies

OPTIMOS™ 3 N+N DUAL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 11.2 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	BSC112N06LDATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	4020 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	65 W
Rds On (Max) @ Id, Vgs	11.2 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Power - Max [Max]	Technology	FET Feature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
Infineon Technologies BSC112N06LDATMA1	65 W	MOSFET (Metal Oxide)	Logic Level Gate	11.2 mOhm	20 A	2 N-Channel (Dual)	2.2 V	4020 pF	Surface Mount	8-PowerVDFN	-55 °C	175 ░C	60 V	PG-TDSON-8-4

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General part information

Mosfet Array 60V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4

Technical documentation and resources