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OPTIMOS™ 3 N+N DUAL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 11.2 MOHM;
| Part | Power - Max [Max] | Technology | FET Feature | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Configuration | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 65 W | MOSFET (Metal Oxide) | Logic Level Gate | 11.2 mOhm | 20 A | 2 N-Channel (Dual) | 2.2 V | 4020 pF | Surface Mount | 8-PowerVDFN | -55 °C | 175 ░C | 60 V | PG-TDSON-8-4 |