BFP540ESDH6327XTSA1

Active

Infineon Technologies

TRANSISTOR, NPN, 4.5V, 0.08A, SOT-343 ROHS COMPLIANT: YES

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Active

Infineon Technologies

TRANSISTOR, NPN, 4.5V, 0.08A, SOT-343 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFP540ESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	30 GHz
Gain	21.5 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.4 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	250 mW
Supplier Device Package	PG-SOT343-3D
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Transistor Type	Power - Max [Max]	Gain	Package / Case	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Current - Collector (Ic) (Max) [Max]
Infineon Technologies BFP540H6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	16 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540ESDH6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	21.5 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540E6327BTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	21.5 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540FESDH6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	4-TSFP	NPN	250 mW	20 dBi	4-SMD Flat Leads	1.4 dB	0.9 dB	80 mA

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General part information

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier

Technical documentation and resources