BFP540FESDH6327XTSA1

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 4.5 V, 30 GHZ, 250 MW, 80 MA, 50 ROHS COMPLIANT: YES

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Active

Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 4.5 V, 30 GHZ, 250 MW, 80 MA, 50 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFP540FESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	30 GHz
Gain	20 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.4 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	4-SMD, Flat Leads
Power - Max [Max]	250 mW
Supplier Device Package	4-TSFP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Transistor Type	Power - Max [Max]	Gain	Package / Case	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Current - Collector (Ic) (Max) [Max]
Infineon Technologies BFP540H6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	16 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540ESDH6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	21.5 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540E6327BTSA1	50	Surface Mount	30 GHz	150 °C	5 V	PG-SOT343-3D	NPN	250 mW	21.5 dB	SC-82A SOT-343	1.4 dB	0.9 dB	80 mA
Infineon Technologies BFP540FESDH6327XTSA1	50	Surface Mount	30 GHz	150 °C	5 V	4-TSFP	NPN	250 mW	20 dBi	4-SMD Flat Leads	1.4 dB	0.9 dB	80 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier

Technical documentation and resources