FERD20S100SH
ObsoleteDIODE FERD 100V 20A TO251
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FERD20S100SH
ObsoleteDIODE FERD 100V 20A TO251
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Technical Specifications
Parameters and characteristics for this part
| Specification | FERD20S100SH |
|---|---|
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-251 (IPAK) |
| Technology | FERD (Field Effect Rectifier Diode) |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 780 mV |
FERD20H100S Series
50 V, 20 A Power FLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)
| Part | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Package / Case | Technology | Speed | Mounting Type | Diode Configuration | Operating Temperature - Junction | Current - Average Rectified (Io) (per Diode) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 175 °C | 140 µA | 100 V | DPAK | 705 mV | DPAK (2 Leads + Tab) SC-63 TO-252-3 | FERD (Field Effect Rectifier Diode) | 200 mA 500 ns | Surface Mount | ||||
STMicroelectronics | 175 °C | 140 µA | 100 V | TO-220 | 705 mV | TO-220-3 | FERD (Field Effect Rectifier Diode) | 200 mA 500 ns | Through Hole | ||||
STMicroelectronics | 175 °C | 100 µA | 100 V | TO-251 (IPAK) | 780 mV | IPAK TO-251-3 Short Leads TO-251AA | FERD (Field Effect Rectifier Diode) | 200 mA 500 ns | Through Hole | ||||
STMicroelectronics | 970 µA | 60 V | D2PAK | 575 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | FERD (Field Effect Rectifier Diode) | Surface Mount | 1 Pair Common Cathode | 150 °C | 10 A | No Recovery Time | ||
STMicroelectronics | 800 µA | 50 V | PowerFlat™ (5x6) | 510 mV | 8-PowerVDFN | FERD (Field Effect Rectifier Diode) | 200 mA 500 ns | Surface Mount | 150 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FERD20H100S Series
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.
With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.
Documents
Technical documentation and resources