Technical Specifications
Parameters and characteristics for this part
| Specification | FERD20L60CG-TR |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 970 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Speed | No Recovery Time |
| Supplier Device Package | D2PAK |
| Technology | FERD (Field Effect Rectifier Diode) |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 575 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FERD20H100S Series
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.
With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.