Technical Specifications
Parameters and characteristics for this part
| Specification | STN3P6F6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 2.6 W |
| Rds On (Max) @ Id, Vgs | 160 mΩ |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.94 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.40 | |||
| 2000 | $ 0.36 | |||
| Digi-Reel® | 1 | $ 0.94 | ||
| 10 | $ 0.82 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.40 | |||
| 2000 | $ 0.36 | |||
| Tape & Reel (TR) | 4000 | $ 0.36 | ||
| 8000 | $ 0.34 | |||
| 12000 | $ 0.31 | |||
| 28000 | $ 0.31 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.23 | |
| 10 | $ 0.89 | |||
| 25 | $ 0.81 | |||
| 50 | $ 0.74 | |||
| 100 | $ 0.67 | |||
| 250 | $ 0.61 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.49 | |||
Description
General part information
STN3P6F6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.