STN3P6F6 Series

P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package

Catalog

P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STN3P6F6	10 V	340 pF	SOT-223	TO-261-4 TO-261AA	20 V	160 mΩ	60 V	Surface Mount	-55 °C	175 ░C	2.6 W	6.4 nC	P-Channel	MOSFET (Metal Oxide)	4 V	3 A

Catalog

P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.