IPB020N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 2 MOHM;
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IPB020N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 2 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB020N08N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 166 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB020 Series
Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB020N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.