IPB020 Series

Catalog

OPTIMOS™ 5 LINEAR FET N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 2 MOHM; WIDE SOA

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)
Infineon Technologies IPB020N10N5LFATMA1	195 nC	4.1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	313 W	176 A	Surface Mount	MOSFET (Metal Oxide)	N-Channel	2 mOhm	840 pF	20 V	100 V	10 V	-55 °C	150 °C
Infineon Technologies IPB020N04NGATMA1	120 nC	4 V	D2PAK TO-263-7		140 A	Surface Mount	MOSFET (Metal Oxide)	N-Channel	2 mOhm		20 V	40 V	10 V	-55 °C	175 ░C	9700 pF	PG-TO263-7-3	167 W
Infineon Technologies IPB020N08N5ATMA1	166 nC	3.8 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 W	120 A	Surface Mount	MOSFET (Metal Oxide)	N-Channel	2 mOhm	12100 pF	20 V	80 V	6 V 10 V	-55 °C	175 ░C