Zenode.ai Logo
Beta
⌘K
Log InSign Up
SCTH70N120G2V-7 - ROHM SCT3160KWAHRTL

SCTH70N120G2V-7

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 90 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDS13403+27
SCTH70N120G2V-7 - ROHM SCT3160KWAHRTL

SCTH70N120G2V-7

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 90 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsDS13403+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTH70N120G2V-7
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds3540 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)469 W
Supplier Device PackageH2PAK-7
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 35.09
Digi-Reel® 1$ 35.09
Tape & Reel (TR) 1000$ 22.91
NewarkEach (Supplied on Cut Tape) 1$ 42.70

Description

General part information

SCTH70N120G2V-7 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.