SCTH70N120G2V-7 Series

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package

Catalog

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type
STMicroelectronics SCTH70N120G2V-7	150 nC	469 W	-10 V	22 V	1200 V	-55 °C	175 ░C	90 A	4.9 V	18 V	H2PAK-7	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	3540 pF	N-Channel

Catalog

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.