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BSZ440N10NS3GATMA1 - PG-TSDSON-8

BSZ440N10NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 44 MOHM;

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Search across all available documentation for this part.

BSZ440N10NS3GATMA1 - PG-TSDSON-8

BSZ440N10NS3GATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 44 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ440N10NS3GATMA1
Current - Continuous Drain (Id) @ 25°C18 A, 5.3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.1 nC
Input Capacitance (Ciss) (Max) @ Vds640 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)29 W
Rds On (Max) @ Id, Vgs44 mOhm
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.91
10$ 0.68
100$ 0.47
500$ 0.38
1000$ 0.32
2000$ 0.31
Digi-Reel® 1$ 0.91
10$ 0.68
100$ 0.47
500$ 0.38
1000$ 0.32
2000$ 0.31
Tape & Reel (TR) 5000$ 0.27
10000$ 0.26
15000$ 0.25

Description

General part information

BSZ440 Series

The BSZ440N10NS3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.

Documents

Technical documentation and resources