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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 44 MOHM;
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 640 pF | 8-PowerTDFN | 5.3 A 18 A | N-Channel | Surface Mount | 44 mOhm | 100 V | 29 W | 6 V 10 V | PG-TSDSON-8 | 20 V | 9.1 nC | 2.7 V | -55 °C | 150 °C |