Zenode.ai Logo
Beta
⌘K
Log InSign Up
SCTL35N65G2V - STMICROELECTRONICS SCTL35N65G2V

SCTL35N65G2V

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 40 A IN A POWERFLAT 8X8 HV PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+27
SCTL35N65G2V - STMICROELECTRONICS SCTL35N65G2V

SCTL35N65G2V

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 40 A IN A POWERFLAT 8X8 HV PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTL35N65G2V
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]73 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]417 W
Rds On (Max) @ Id, Vgs67 mOhm
Supplier Device PackagePowerFlat™ (8x8) HV
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 14.42
10$ 12.71
100$ 10.99
500$ 9.96
1000$ 9.13
Digi-Reel® 1$ 14.42
10$ 12.71
100$ 10.99
500$ 9.96
1000$ 9.13
Tape & Reel (TR) 3000$ 8.50
NewarkEach (Supplied on Cut Tape) 1$ 19.00
10$ 15.17
25$ 15.12
50$ 15.11
100$ 13.73

Description

General part information

SCTL35N65G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.