SCTL35N65G2V Series

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

Catalog

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)
STMicroelectronics SCTL35N65G2V	-55 °C	175 ░C	73 nC	1370 pF	417 W	8-PowerVDFN	-10 V	22 V	67 mOhm	Surface Mount	N-Channel	PowerFlat™ (8x8) HV	650 V

Catalog

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.