
STD60NF06T4
ActiveN-CHANNEL 60 V, 0.014 OHM TYP., 60 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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STD60NF06T4
ActiveN-CHANNEL 60 V, 0.014 OHM TYP., 60 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD60NF06T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.00 | |
| 10 | $ 1.66 | |||
| 100 | $ 1.32 | |||
| 500 | $ 1.12 | |||
| 1000 | $ 0.95 | |||
| Digi-Reel® | 1 | $ 2.00 | ||
| 10 | $ 1.66 | |||
| 100 | $ 1.32 | |||
| 500 | $ 1.12 | |||
| 1000 | $ 0.95 | |||
| Tape & Reel (TR) | 2500 | $ 0.90 | ||
| 5000 | $ 0.87 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.95 | |
| 10 | $ 1.63 | |||
| 25 | $ 1.44 | |||
| 50 | $ 1.27 | |||
| 100 | $ 1.04 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.75 | |||
| 1000 | $ 0.70 | |||
Description
General part information
STD60NF55LAT4 Series
This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources