STD60NF55LAT4 Series

N-channel 60 V, 0.014 Ohm typ., 60 A STripFET II Power MOSFET in a DPAK package

Catalog

N-channel 60 V, 0.014 Ohm typ., 60 A STripFET II Power MOSFET in a DPAK package

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STD60NF06T4	DPAK	66 nC	20 V	60 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	4 V	60 A	110 W	Surface Mount	16 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	1810 pF
STMicroelectronics STD60NF55LAT4	TO-252 (DPAK)	40 nC	15 V	55 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3		2 V	60 A	110 W	Surface Mount	15 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	1950 pF	Automotive	AEC-Q101	10 V	5 V

Catalog

N-channel 60 V, 0.014 Ohm typ., 60 A STripFET II Power MOSFET in a DPAK package

Description

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.