SSM6L39TU,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L39TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	268 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	143 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	FET Feature	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration
Toshiba Semiconductor and Storage SSM6L39TU,LF	150 °C	Surface Mount	268 pF	1.8 V	Logic Level Gate	6-SMD Flat Leads	800 mA	MOSFET (Metal Oxide)	20 V	143 mOhm	UF6	1 V	500 mW	N and P-Channel

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General part information

Mosfet Array 20V 800mA 500mW Surface Mount UF6

Technical documentation and resources