MOSFET N/P-CH 20V 0.8A UF6
| Part | Operating Temperature | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | FET Feature | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Power - Max [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | Surface Mount | 268 pF | 1.8 V | Logic Level Gate | 6-SMD Flat Leads | 800 mA | MOSFET (Metal Oxide) | 20 V | 143 mOhm | UF6 | 1 V | 500 mW | N and P-Channel |