APTM100A23SCTG

Obsolete

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

Technical Specifications

Parameters and characteristics for this part

Specification	APTM100A23SCTG

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1 kV
Drain to Source Voltage (Vdss)	1000 V
Gate Charge (Qg) (Max) @ Vgs [Max]	308 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP4
Power - Max [Max]	694 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	SP4
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	5 V

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]
Microsemi Corporation APTM100A12STG	1250 W	616 nC	SP3	5 V	150 °C	-40 °C	1 kV	1000 V	SP3	17400 pF	Chassis Mount	68 A	120 mOhm	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)
Microsemi Corporation APTM100A23SCTG	694 W	308 nC	SP4		150 °C	-40 °C	1 kV	1000 V	SP4		Chassis Mount	36 A	270 mOhm	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	8700 pF	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1000V (1kV) 36A 694W Chassis Mount SP4

Technical documentation and resources