APTM100 Series

Catalog

MOSFET 2N-CH 1000V 68A SP3

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]
Microsemi Corporation APTM100A12STG	1250 W	616 nC	SP3	5 V	150 °C	-40 °C	1 kV	1000 V	SP3	17400 pF	Chassis Mount	68 A	120 mOhm	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)
Microsemi Corporation APTM100A23SCTG	694 W	308 nC	SP4		150 °C	-40 °C	1 kV	1000 V	SP4		Chassis Mount	36 A	270 mOhm	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	8700 pF	5 V