IPN70R1K2P7SATMA1

LTB

Infineon Technologies

MOSFET N-CH 700V 4.5A SOT223

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LTB

Infineon Technologies

MOSFET N-CH 700V 4.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	IPN70R1K2P7SATMA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	174 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	6.3 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPN70R1K0CEATMA1	TO-261-4 TO-261AA	Surface Mount	20 V	5 W	328 pF	3.5 V	N-Channel	PG-SOT223	MOSFET (Metal Oxide)	10 V	700 V	7.4 A	150 °C	-40 °C	1 Ohm	14.9 nC
Infineon Technologies IPN70R1K2P7SATMA1	TO-261-4 TO-261AA	Surface Mount	16 V		174 pF	3.5 V	N-Channel	PG-SOT223	MOSFET (Metal Oxide)	10 V	700 V	4.5 A	150 °C	-40 °C	1.2 Ohm	4.8 nC	6.3 W
Infineon Technologies IPN70R1K4P7SATMA1	TO-261-4 TO-261AA	Surface Mount	16 V		158 pF	3.5 V	N-Channel	PG-SOT223	MOSFET (Metal Oxide)	10 V	700 V	4 A	150 °C	-40 °C	1.4 Ohm		6.2 W	4.7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 4.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223

Technical documentation and resources