TRANS MOSFET N-CH 700V 7.4A 3-PIN(2+TAB) SOT-223 T/R
| Part | Package / Case | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-261-4 TO-261AA | Surface Mount | 20 V | 5 W | 328 pF | 3.5 V | N-Channel | PG-SOT223 | MOSFET (Metal Oxide) | 10 V | 700 V | 7.4 A | 150 °C | -40 °C | 1 Ohm | 14.9 nC | ||
Infineon Technologies | TO-261-4 TO-261AA | Surface Mount | 16 V | 174 pF | 3.5 V | N-Channel | PG-SOT223 | MOSFET (Metal Oxide) | 10 V | 700 V | 4.5 A | 150 °C | -40 °C | 1.2 Ohm | 4.8 nC | 6.3 W | ||
Infineon Technologies | TO-261-4 TO-261AA | Surface Mount | 16 V | 158 pF | 3.5 V | N-Channel | PG-SOT223 | MOSFET (Metal Oxide) | 10 V | 700 V | 4 A | 150 °C | -40 °C | 1.4 Ohm | 6.2 W | 4.7 nC |