GD25WD10EKIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 1MBIT SPI/DUAL 8USON

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GigaDevice Semiconductor (HK) Limited

IC FLASH 1MBIT SPI/DUAL 8USON

Technical Specifications

Parameters and characteristics for this part

Specification	GD25WD10EKIGR

Access Time	6 ns
Clock Frequency	104 MHz
Memory Format	FLASH
Memory Interface	SPI - Dual I/O
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-XFDFN Exposed Pad
Supplier Device Package	8-USON (1.5x1.5)
Technology	FLASH - NOR (SLC)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	1.65 V
Write Cycle Time - Word, Page [custom]	150 µs
Write Cycle Time - Word, Page [custom]	6 ms

Part	Memory Size	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Mounting Type	Memory Format	Technology	Supplier Device Package	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Clock Frequency	Memory Organization	Package / Case	Memory Type	Memory Interface
GigaDevice Semiconductor (HK) Limited GD25WD10CK6IGR	1 Mbit	1.65 V	3.6 V	12 ns	Surface Mount	FLASH	FLASH - NOR (SLC)	8-USON (1.5x1.5)	55 µs	6 ms	85 °C	-40 °C	100 MHz	128K x 8	8-XFDFN Exposed Pad	Non-Volatile	SPI - Dual I/O
GigaDevice Semiconductor (HK) Limited GD25WD10EKIGR	1 Mbit	1.65 V	3.6 V	6 ns	Surface Mount	FLASH	FLASH - NOR (SLC)	8-USON (1.5x1.5)	150 µs	6 ms	85 °C	-40 °C	104 MHz	128K x 8	8-XFDFN Exposed Pad	Non-Volatile	SPI - Dual I/O

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR (SLC) Memory IC 1Mbit SPI - Dual I/O 104 MHz 6 ns 8-USON (1.5x1.5)

Technical documentation and resources

No documents available