GD25WD10 Series

Catalog

IC FLASH 1MBIT SPI/DUAL 8USON

Part	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Memory Depth	Memory Width	Package Length	Package Width	Package Name	Access Time	Mounting Type	Memory Format	Memory Size	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Memory Type	Memory Interface (Type)	Technology	Clock Frequency	Write Cycle Time - Word	Write Cycle Time - Page
GigaDevice Semiconductor (HK) Limited GD25WD10CK6IGR	3.6 V	1.65 V	128 K	8 bit	1.5 mm	1.5 mm	8-USON	12 ns	Surface Mount	FLASH	1 Mbit	8-XFDFN Exposed Pad	85 °C	-40 °C	Non-Volatile	SPI - Dual I/O	FLASH - NOR (SLC)	100 MHz	55 µs	6 ms
GigaDevice Semiconductor (HK) Limited GD25WD10EKIGR	3.6 V	1.65 V	128 K	8 bit	1.5 mm	1.5 mm	8-USON	6 ns	Surface Mount	FLASH	1 Mbit	8-XFDFN Exposed Pad	85 °C	-40 °C	Non-Volatile	SPI - Dual I/O	FLASH - NOR (SLC)	104 MHz	150 µs	6 ms
GigaDevice Semiconductor (HK) Limited GD25WD10CKIGR	3.6 V	1.65 V	128 K	8 bit	1.5 mm	1.5 mm	8-USON	12 ns	Surface Mount	FLASH	1 Mbit	8-XFDFN Exposed Pad	85 °C	-40 °C	Non-Volatile	SPI - Dual I/O	FLASH - NOR (SLC)	100 MHz	55 µs	6 ms
GigaDevice Semiconductor (HK) Limited GD25WD10ETIGR	3.6 V	1.65 V	128 K	8 bit	0.154 in	3.9 mm	8-SOIC 8-SOP	6 ns	Surface Mount	FLASH	1 Mbit		85 °C	-40 °C	Non-Volatile	SPI - Dual I/O	FLASH - NOR (SLC)	104 MHz	150 µs	6 ms