IPD03N03LA G

Obsolete

Infineon Technologies

MOSFET N-CH 25V 90A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD03N03LA G

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPD03N03LB G	PG-TO252-3-11	40 nC	-55 °C	175 ░C	5200 pF	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	Surface Mount	3.3 mOhm	115 W	MOSFET (Metal Oxide)	90 A	20 V	4.5 V 10 V	N-Channel
Infineon Technologies IPD03N03LA G	PG-TO252-3-11		-55 °C	175 ░C	5200 pF	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	Surface Mount	3.2 mOhm	115 W	MOSFET (Metal Oxide)	90 A	20 V	4.5 V 10 V	N-Channel	41 nC

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General part information

N-Channel 25 V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources