IPD03N Series

Catalog

MOSFET N-CH 30V 90A TO252-3

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPD03N03LB G	PG-TO252-3-11	40 nC	-55 °C	175 ░C	5200 pF	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	Surface Mount	3.3 mOhm	115 W	MOSFET (Metal Oxide)	90 A	20 V	4.5 V 10 V	N-Channel
Infineon Technologies IPD03N03LA G	PG-TO252-3-11		-55 °C	175 ░C	5200 pF	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	Surface Mount	3.2 mOhm	115 W	MOSFET (Metal Oxide)	90 A	20 V	4.5 V 10 V	N-Channel	41 nC