DMP6180SK3Q-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP6180SK3Q-13

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	984.7 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type
Diodes Inc DMP6180SK3Q-13	20 V	1.7 W	110 mOhm	17.1 nC	AEC-Q101	60 V	P-Channel	2.7 V	-55 °C	150 °C	TO-252 (DPAK)	4.5 V 10 V	Automotive	984.7 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 A	MOSFET (Metal Oxide)	Surface Mount
Diodes Inc DMP6180SK3-13	20 V	1.7 W	110 mOhm	17.1 nC		60 V	P-Channel	2.7 V	-55 °C	150 °C	TO-252-3	4.5 V 10 V		984.7 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 A	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101 and supported by a PPAP.