P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Grade | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | 1.7 W | 110 mOhm | 17.1 nC | AEC-Q101 | 60 V | P-Channel | 2.7 V | -55 °C | 150 °C | TO-252 (DPAK) | 4.5 V 10 V | Automotive | 984.7 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 14 A | MOSFET (Metal Oxide) | Surface Mount |
Diodes Inc | 20 V | 1.7 W | 110 mOhm | 17.1 nC | 60 V | P-Channel | 2.7 V | -55 °C | 150 °C | TO-252-3 | 4.5 V 10 V | 984.7 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 14 A | MOSFET (Metal Oxide) | Surface Mount |