Technical Specifications
Parameters and characteristics for this part
| Specification | STD18N55M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 192 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD18N55M5 Series
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources
Flyers (5 of 7)
TN1156
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 7)
AN2842
Application Notes (5 of 6)Flyers (5 of 7)
Flyers (5 of 7)
AN2344
Application Notes (5 of 6)AN4250
Application Notes (5 of 6)Flyers (5 of 7)
DS6705
Product SpecificationsTN1225
Technical Notes & ArticlesAN4337
Application Notes (5 of 6)AN4829
Application Notes (5 of 6)Flyers (5 of 7)
TN1224
Technical Notes & ArticlesFlyers (5 of 7)
