STD1805-1

Obsolete

STMicroelectronics

TRANS NPN 60V 5A IPAK

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STD1805-1

Obsolete

STMicroelectronics

TRANS NPN 60V 5A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD1805-1

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	15 W
Supplier Device Package	IPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	600 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

STD18N55M5 Series

N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Mounting Type	Supplier Device Package	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD1805-1	200	NPN	150 °C	Through Hole	IPAK	15 W	IPAK TO-251-3 Short Leads TO-251AA	60 V	150 MHz	600 mV	5 A	100 nA
STMicroelectronics STD18N55M5			150 °C	Surface Mount	DPAK		DPAK (2 Leads + Tab) SC-63 TO-252-3						550 V	192 mOhm	10 V	5 V	1260 pF	MOSFET (Metal Oxide)	110 W	N-Channel	16 A	25 V	31 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STD18N55M5 Series

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

Documents

Technical documentation and resources