IPI65R190C6XKSA1

LTB

Infineon Technologies

MOSFET N-CH 650V 20.2A TO262-3

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LTB

Infineon Technologies

MOSFET N-CH 650V 20.2A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI65R190C6XKSA1

Current - Continuous Drain (Id) @ 25°C	20.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	151 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPI65R190C6XKSA1	10 V	73 nC	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	151 W	1620 pF	190 mOhm	20.2 A	MOSFET (Metal Oxide)	3.5 V	PG-TO262-3	Through Hole	20 V	650 V
Infineon Technologies IPI65R190CFDXKSA2	10 V		-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	151 W	1850 pF	190 mOhm	17.5 A	MOSFET (Metal Oxide)	4.5 V	PG-TO262-3	Through Hole	20 V	650 V	68 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3

Technical documentation and resources