IPI65R190 Series

Catalog

MOSFET N-CH 650V 20.2A TO262-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPI65R190C6XKSA1	10 V	73 nC	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	151 W	1620 pF	190 mOhm	20.2 A	MOSFET (Metal Oxide)	3.5 V	PG-TO262-3	Through Hole	20 V	650 V
Infineon Technologies IPI65R190CFDXKSA2	10 V		-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	151 W	1850 pF	190 mOhm	17.5 A	MOSFET (Metal Oxide)	4.5 V	PG-TO262-3	Through Hole	20 V	650 V	68 nC