TK22A10N1,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 22A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 22A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK22A10N1,S4X

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	13.8 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package
Toshiba Semiconductor and Storage TK22A10N1,S4X	Through Hole	10 V	22 A	20 V	4 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	N-Channel	1800 pF	100 V	28 nC	150 °C	13.8 mOhm	TO-220SIS

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General part information

N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS

Technical documentation and resources