TK22A10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0138 Ω@10V, TO-220SIS, U-MOSⅧ-H
| Part | Gate Charge (Max) | Rds On (Max) | Operating Temperature | Vgs(th) (Max) | Package Name | Vgs (Max) | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 28 nC | 13.8 mOhm 13.8 mOhm | 150 °C | 4 V | TO-220SIS | 20 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 30 W | 100 V | Through Hole | TO-220-3 Full Pack | 22 A | 1800 pF |