IQDH35N03LM5CGATMA1

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Infineon Technologies

30 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

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IQDH35N03LM5CGATMA1

Active

Infineon Technologies

30 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQDH35N03LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	700 A, 66 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	197 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	18000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	9-PowerTDFN
Power Dissipation (Max)	2.5 W
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	0.35 mOhm
Supplier Device Package	PG-TTFN-9-U02
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IQDH35 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Infineon Technologies IQDH35N03LM5CGATMA1	18000 pF	20 V	66 A 700 A	9-PowerTDFN	2.5 W	278 W	-55 °C	150 °C	197 nC	2 V	PG-TTFN-9-U02	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	0.35 mOhm	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.63
		10	$ 3.26
		25	$ 3.08
		100	$ 2.67
		250	$ 2.53
		500	$ 2.27
		1000	$ 1.92
		2500	$ 1.82
	Digi-Reel®	1	$ 3.63
		10	$ 3.26
		25	$ 3.08
		100	$ 2.67
		250	$ 2.53
		500	$ 2.27
		1000	$ 1.92
		2500	$ 1.82
	Tape & Reel (TR)	5000	$ 1.75
Newark	Each (Supplied on Cut Tape)	1	$ 3.13
		10	$ 2.34
		25	$ 2.14
		50	$ 2.04
		100	$ 1.93
		250	$ 1.83
		500	$ 1.77
		1000	$ 1.72

Description

General part information

IQDH35 Series

The power MOSFET IQDH35N03LM5CG 30 V comes in a PQFN 5x6 mm2Source-Downpackage. The part offers the industry’s lowest RDS(on)of 0.35 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS,telecompower, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

Documents

Technical documentation and resources