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30 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 18000 pF | 20 V | 66 A 700 A | 9-PowerTDFN | 2.5 W | 278 W | -55 °C | 150 °C | 197 nC | 2 V | PG-TTFN-9-U02 | N-Channel | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 0.35 mOhm | 30 V |