IXFA4N100Q-TRL

IXYS

MOSFET N-CH 1000V 4A TO263

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IXYS

MOSFET N-CH 1000V 4A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA4N100Q-TRL

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFA4N100Q-TRL	20 V	4.5 V	-55 °C	150 °C	150 W	N-Channel	3 Ohm	1000 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1050 pF	MOSFET (Metal Oxide)	Surface Mount	10 V	TO-263AA (IXFA)	4 A	39 nC

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General part information

N-Channel 1000 V 4A (Tc) 150W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available