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MOSFET N-CH 1000V 4A TO263
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 20 V | 4.5 V | -55 °C | 150 °C | 150 W | N-Channel | 3 Ohm | 1000 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1050 pF | MOSFET (Metal Oxide) | Surface Mount | 10 V | TO-263AA (IXFA) | 4 A | 39 nC |