
CSD17527Q5A
ActiveTexas Instruments
30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 10.8 MOHM

CSD17527Q5A
ActiveTexas Instruments
30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 10.8 MOHM
Description
General part information
CSD17527 Series
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17527Q5A |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 65 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 3.4 nC |
| Input Capacitance (Ciss) (Max) | 506 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-VSONP |
| Package Width | 6 mm |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) | 10.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Ringing Reduction Techniques for NexFET High Performance MOSFETs
Semiconductor and IC Package Thermal Metrics (Rev. D)
QFN and SON PCB Attachment (Rev. C)
Using MOSFET Transient Thermal Impedance Curves In Your Design
Avoid Common Mistakes When Selecting And Designing With Power MOSFETs
MOSFET Support and Training Tools (Rev. F)
Tips for Successfully Paralleling Power MOSFETs
Power Management Guide 2018 (Rev. R)
30V, N-Channel NexFET™ Power MOSFETs, CSD17527Q5A datasheet (Rev. A)
Using MOSFET Safe Operating Area Curves in Your Design