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DMP2021UFDE-13 - Package Image for U-DFN2020-6

DMP2021UFDE-13

Active
Diodes Inc

MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K

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DMP2021UFDE-13 - Package Image for U-DFN2020-6

DMP2021UFDE-13

Active
Diodes Inc

MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2021UFDE-13
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]59 nC
Input Capacitance (Ciss) (Max) @ Vds2760 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerUDFN
Power Dissipation (Max)1.9 W
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackageU-DFN2020-6 (Type E)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.17
20000$ 0.16
30000$ 0.16

Description

General part information

DMP2021UFDE Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.