DMP2021UFDE Series

P-Channel Enhancement Mode MOSFET

Catalog

P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type
Diodes Inc DMP2021UFDE-7	1.9 W	59 nC	6-PowerUDFN	2760 pF	20 V	10 V	MOSFET (Metal Oxide)	16 mOhm	1 V	1.5 V 4.5 V	P-Channel	-55 °C	150 °C	U-DFN2020-6 (Type E)	Surface Mount
Diodes Inc DMP2021UFDE-13	1.9 W	59 nC	6-PowerUDFN	2760 pF	20 V	10 V	MOSFET (Metal Oxide)	16 mOhm	1 V	1.5 V 4.5 V	P-Channel	-55 °C	150 °C	U-DFN2020-6 (Type E)	Surface Mount

Catalog

P-Channel Enhancement Mode MOSFET

Key Features

• 0.6mm Profile – Ideal for Low Profile Applications

• Low Gate Threshold Voltage

• Low On-Resistance

• ESD Protected Gate

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.